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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1A1G THRU 1A7G GLASS PASSIVATED JUNCTION SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * High reliability Low leakage Low forward voltage drop High current capability Glass passivated junction R-1 MECHANICAL DATA * * * * * Case: Molded plastic black body Epoxy: Device hasUL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.19 gram .787 (20.0) MIN. .025 (0.65) DIA. .021 (0.55) .126 (3.2) .106 (2.7) .102 (2.6) DIA. .091 (2.3) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .787 (20.0) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 25 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note) Typical Thermal Resistance Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0A DC @TA = 25 o C Maximum DC Reverse Current at Rated DC Blocking Voltage @TA = 100 o C Maximum Full Load Reverse Current Full Cycle Average .375" (9.5mm) lead length at TL = 75oC NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts SYMBOL VF 1A1G 1A2G 1A3G 1A4G 1.1 5.0 50 30 1A5G 1A6G 1A7G UNITS Volts uAmps uAmps 2001-5 SYMBOL VRRM VRMS VDC IO IFSM CJ R JA TJ, TSTG 1A1G 50 35 50 1A2G 100 70 100 1A3G 200 140 200 1A4G 400 280 400 1.0 25 15 60 -65 to + 175 0 1A5G 600 420 600 1A6G 800 560 800 1A7G 1000 700 1000 UNITS Volts Volts Volts Amps Amps pF C/ W 0 C IR RATING AND CHARACTERISTIC CURVES ( 1A1G THRU 1A7G ) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE 1.0 .8 .6 .4 .2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, ( ) Single Phase Half Wave 60Hz Resistive or Inductive Load AVERAGE FORWARD CURRENT, (A) INSTANTANEOUS FORWARD CURRENT, (A) FIG. 2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 4 2 1.0 .4 .2 .1 TJ = 25 Pulse Width=300uS 1% Duty Cycle .04 .02 .01 .6 .8 1.0 1.2 1.4 1.5 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 4 - TYPICAL REVERSE CHARACTERISTICS PEAK FORWARD SURGE CURRENT, (A) 40 30 20 10 0 1 8.3ms Single Half Sine-Wave (JEDED Method) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 10 TJ = 25 1.0 0.1 .01 2 4 6 8 10 20 40 6080100 NUMBER OF CYCLES AT 60Hz JUNCTION CAPACITANCE, (pF) 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) TJ = 25 RECTRON |
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